收藏本站
ZXM61P02F
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GS
Value
-20
±12
Units
V
V
Continuous Drain Current
V GS = 4.5V
T A = +25°C (Note 6)
T A = +70°C (Note 6)
I D
-0.9
-0.7
A
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)
I DM
I S
I SM
-4.9
-0.9
-4.9
A
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Linear Derating Factor
Power Dissipation (Note 6)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P D
P D
R θ JA
R θ JA
T J, T STG
Value
625
5
806
6.4
200
155
-55 to +150
Unit
mW
mW/°C
mW
mW/°C
°C/W
°C/W
°C
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
6. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10 μ s - pulse current limited by maximum junction temperature.
Thermal Characteristics
ZXM61P02F
Document Number DS33478 Rev. 3 - 2
2 of 7
www.diodes.com
October 2013
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
ZXM61P03FTC MOSFET P-CHAN 30V SOT23-3
ZXM62N03GTA MOSFET N-CH 30V ENHANCE SOT223
ZXM62P02E6TA MOSFET P-CH 20V 2.3A SOT23-6
ZXM62P03E6TA MOSFET P-CH 30V 2.6A SOT-23-6
ZXM64N02XTC MOSFET N-CHAN 20V MSOP8
ZXM64N035L3 MOSFET N-CH 35V 13A TO-220-3
ZXM64P02XTC MOSFET P-CHAN 20V MSOP8
ZXM64P035L3 MOSFET P-CH 35V 12A TO-220-3
相关代理商/技术参数
ZXM61P03 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61P03F 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, P, SOT-23 制造商:Diodes Incorporated 功能描述:P CHANNEL MOSFET, -30V, 1.1A SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes
ZXM61P03F 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23
ZXM61P03F_05 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61P03FTA 功能描述:MOSFET 30V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM61P03FTA-CUT TAPE 制造商:DIODES 功能描述:ZXM61P03F 30 V 0.35 Ohm P-Channel Enhancement Mode Vertical DMOS FET - SOT-23
ZXM61P03FTC 功能描述:MOSFET 30V P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM62N02E6 制造商:Diodes Incorporated 功能描述: 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6